Investigation of Fully Depleted SOI and MOSFET Characteristics
Pages : 114-118, DOI: https://doi.org/10.14741/ijcet/v.13.2.10
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Abstract
The electrical characteristics of n-channel fully depleted silicon on insulator (FDSOI) and metal oxide semiconductor field effect transistor (MOSFET) are investigated in this paper. Both transistors are compared in terms of electrical characteristics which are the threshold voltage, subthreshold slope, on-state current and leakage current. Silvaco TCAD tools are used for simulating both MOSFET and FDSOI MOSFETs. Based on the results, it can be concluded that FDSOI MOSFET outperforms MOSFET.
Keywords: Silicon on Insulator, Fully-Depleted, Subthreshold Slope, Leakage Current, Silvaco.
MECHPGCON, MIT College of Engineering, Pune, India
AMET, MIT College of Engineering, Pune, India
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