Author : Mustafa M. A. Hussein, Manal M. Abdullah, Wasan R. Saleh and Kadhim A. Aadem

The CdTe/Al2O3/Si solar cells have been fabricated on p-Si wafer by thermal evaporation and ALD methods at different
thicknesses of Al2O3 (1.7, 3.5, and 4.5nm). In this work, the tunneling effect of the ultrathin oxide layer was studied. The
electrical properties including I-V characteristics are studied and interpreted. Gold and indium tin oxide (ITO) are used
as back and front contacts, respectively. It was found that the quantum efficiency and filling factor have maximum values
at thickness of 1.7nm. The dark current of devices was very close to zero.

Keywords: Solar cell; CdTe; Al2O3; tunneling; efficiency; fill factor.

Article published in International Journal of Current  Engineering  and Technology, Vol.4,No.3 (June- 2014)