Author : Pramod Kumar Jain and Poorvi Jain

In this paper we are introducing a temperature sensor based on CMOS design known for its simplicity, reduced parasitic or latch-up and high package density .The paper aims at developing the MOSFET as a temperature sensing element operating in subthreshold region that demands for ability to control the power dissipation. It focuses on temperature measurement using the difference between the gate-source voltages of transistors that is proportional to absolute temperature with low power consumption which facilitates it for low power applications such as battery powered portable devices and in VLSI chips to monitor heat dissipation. This proposed CMOS temperature sensor is able to measure the temperature range from 0oC to 120oC . The circuit is designed in concept that utilize on chip CMOS temperature sensor and operates with a single rail power supply of 600mV. The total power consumption of merely is 0.15nW [0oC] and 12.5nW [120oC] . The sensitivity of the circuit is about 0.12 nW/ oC. The layout area of sensor is 81×90μm2. This circuit is designed & simulated using Cadence Analog & Digital system design tools UMC 180nm technology.

Keywords: CMOS-Complementary Metal Oxide Semiconductor, MOSFET-Metal Oxide Semiconductor Field Effect Transistor ,VLSI-Very Large Scale Integration , Subthreshold, Temperature sensor.

Article published in International Journal of Current  Engineering  and Technology, Vol.4,No.2 (April- 2014)