Author : Iqbal S.Naji, I. H.Khudayer and Hanaa I.Mohammed

The pure and Sb doped GeSe thin films have been prepared by thermal flash evaporation technique. Both the structural and optical measurement were carried out for as deposited and annealed films at different annealing temperatures. XRD spectra revealed that the all films have one significant broad amorphous peak except for pure GeSe thin film which annealed at 573 K, it has sharp peak belong to orthorhombic structure nearly at 2θ=33o. The results of the optical studies showed that the optical transition is direct and indirect allowed. The energy gap in general increased with increasing annealing temperature and decreased with increase the ratio of Sb dopant. The optical parameters such as refractive index, extinction coefficient and real and imaginary parts of dielectric constants for these films have been investigated, and it was found that the films affected by changing the ratio of Sb dopant and heat treatment .

Keywords: Chalcogenide semiconductors, optical parameters, Ge-Se system, Sb dopant films.

Article published in International Journal of Current Engineering and Technology, Vol.4, No.6 (Dec-2014)