Author : Mohammed T. Hussein, Eman K.Hassan and Estabrak T. Abdullah

In this paper, the device properties of copper phthalocyanine CuPc p-type semiconductor thin film transistors OTFTs with various gate insulator layer thicknesses SiO2 has been studied using the MATLAB software program (version7). The operating performance of the OTFTs was found to be depended on the channel length L, channel width w, SiO2 layer thickness and CuPc active layer thickness. The results show the effect of different SiO2 layer thicknesses on the organic field-effect transistor OFETs give various performances. OFETs gives high performance at thickness of gate insulator 100nm compared with the SiO2 layer thicknesses at (200nm, 300nm), where L=0.25mm , w=4.7mm, n-doped Si substrate functions as the gate, and CuPc layer thickness in the range of 50-60nm. This may be attributed the source-drain bias dependence to a significantly trap-affected carrier transport process in a conduction channel formed in the vicinity of the gate insulator. The CuPc OFET carrier mobility of about 1.22×10-3 cm2/V.s , on/off current ratio of 102 and low threshold voltage of (-4V,-3V,-2V) for gate insulator thicknesses (300nm, 200nm, 100nm) respectively were calculated.

Keywords: CuPc, field-effect transistor, gate insulator

Article published in International Journal of Current Engineering and Technology, Vol.5, No.3 (June-2015)