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Electrical characteristics and performance comparison between partially-depleted SOI and n-MOS Devices using Silvaco T-CAD Simulator

Author : Gautam Kumar Jaiswal, Anil Kumar, A.K.Jaiswal, Rajeev Paulus and Mayur Kumar

Pages : 1058-1063
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Electrical characteristics performance comparison between partially-depleted SOI and n-MOS Devices in order to compare their electrical characteristics using Silvaco software is done and presented in this paper.One specific channel lengths of the Device that had been concentrated as 0.4 micron. The comparisons were focused on three main electrical characteristics that are leakage current, threshold voltage and subthreshold voltage. The device structures were constructed using Silvaco-Athena and the characteristics were examined and simulated using Silvaco-Atlas. Results were analysed and presented to show that the electrical characteristics of partially-depleted SOI devices are better than that of bulk-Si devices. It has also shown that the partially depleted SOI device is superior in the submicron region.


Article published in International Journal of Current  Engineering  and Technology, Vol.4,No.2 (April- 2014)



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