Author : Salma M. Shaban and Farah Qahtan Kamil

The alloys of Cd1-xPbxSe at different Pb concentration (i.e. X=0, 0.025, 0.050, 0.075, and 0.1) were prepared successfully, Thin films of these alloys are deposited using thermal evaporation technique at thickness (126) nm. From the studied D.C measurements The D.C conductivity decreases with the increase of Pb concentration of thin films and we noticed different activation energies. Hall Effect measurements show that the type of thin Pb1-xCdxSe films for all Pb concentration are n-type. From the Hall measurement The Hall mobility increases with the increase of temperature, while it decreases with the increase of Pb concentration. Atomic force microscopy (AFM) measurements shows that average crystallite size are increase with the increase of Pb concentration equal to (0, 0.025, 0.050 and 0.075), except for X=0.1 it is decreased, The average surface roughness decreases for films at X equal to (0.025,0.075,and 0.1) while the behavior for( X=0, 0.050) is opposite.

Keywords: Cd1-xPbxSe, additive, Grain size, Electrical Properties, Thin Films.

Article published in International Journal of Current Engineering and Technology, Vol.5, No.3 (June-2015)