Author : Nathera A.A. Al-Tememee, Mohammed A. Hmeed and Fuad T. Ibrahim

Tin oxide thin films were deposited by dc reactive sputtering system at working gas pressures of (0.015-0.15) mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction (XRD) and atomic force microscopy (AFM). These films showed preferred orientation in (110) plane and according to AFM micrographs, the grain sizes increased non-uniformly as working gas pressure increased.

Keywords: DC Sputtering, Reactive sputtering, Thin films, Tin oxide

Article published in International Journal of Current  Engineering  and Technology, Vol.4,No.2 (April- 2014)