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Optical properties of InxGa1-xAs quantum Wells Grown by Molecular Beam Epitaxial Technique


Author : Laxman Survase, Sen Mathew, Mahesh Gokhale and Manohar Nyayate

Pages : 4133-4135
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Abstract

The samples were grown on (001)-oriented GaAs substrates using molecular beam epitaxy system. The effect of change in the percentage of indium on the optical properties of InxGa1-xAs quantum well structures is investigated using the temperature-dependent photoluminescence from 15 K to 300 K and Raman spectroscopy.The temperature-dependent integrated photoluminescence intensities of the samples reveal that the photoluminescence intensity is significantly enhanced by about 27 times at 15 K with respect to that at 300 K.

Keywords: InxGa1-xAs, quantum wells, photoluminescence, Raman spectroscopy.

Article published in International Journal of Current Engineering and Technology, Vol.4, No.6 (Dec-2014)

 

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